武汉大学物理科学与技术学院博士生导师简介:廖蕾

2016-10-11 16:22:20来源:网络

  5)论文列表 (Citation > 5500, H = 43)

  work in Wuhan University

  2016

  1. H. H. Fang, W. D. Hu*, P. Wang, N. Guo, W. J. Luo, D. S. Zheng, F. Gong, M. Luo, H. Z. Tian, X. T. Zhang, C. Luo, X. Wu, P. P. Chen, L. Liao, A. L. Pan, X. S. Chen, W. Lu, Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire Nano Lett. DOI: 10.1021/acs.nanolett.6b02860

  2. D. S. Zheng, H. H. Fang, P. Wang, W. J. Luo, F. Gong, X. S. Chen, W. Lu, L. Liao*, J. L. Wang*, and W. D. Hu* High-Performance Ferroelectric Polymer Side-Gated CdS Nanowire Ultraviolet Photodetectors Adv. Funct. Mater. DOI: 10.1002/adfm.201601346

  3. Z. Y. Yang, X. Q. Liu, X. M. Zou, J. L. Wang, C. Ma, C. Z. Jiang, J. C. Ho, C. F. Pan, X. H. Xiao*, L. Liao* Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors Adv. Funct. Mater. DOI: 10.1002/adfm.201602250

  4. X. Z. Zhu, Z. H. Zhang, L. Qiu, J. N. Zhuang, L. Zhang, H. Wang, C. N. Liao, H. D. Song, R. X. Qiao, P. Gao, Z. H. Hu, L. Liao, Z. M. Liao, D. P. Yu, E. G. Wang, F. Ding, H. L. Peng, K. H. Liu Ultrafast Growth of Single-crystal Graphene Assisted by a Continuous Oxygen Supply Nature Nanotech. DOI:10.1038/nnano.2016.132

  5. J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou, L. Liao*, S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer Adv. Mater. DOI: 10.1002/adma.201602757.

  6. X. Q. Liu, X. N. Yang, G. Y. Gao, Z. Y. Yang, H. T. Liu, Q. Li, Z. Lou, G. Z. Shen, L. Liao, C. F. Pan*, Z. L. Wang Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires ACS Nano 10, 7451, (2016)

  7. F. Gong, W. J. Luo, J. L. Wang, P. Wang, H. H. Fang, D. S. Zheng, N. Guo, J. L. Wang, M. Luo, J. C. Ho, X. S. Chen, W. Lu, L. Liao*, W. D. Hu* High-Sensitivity Floating-gate Phototransistors Based on WS2 and MoS2 Adv. Funct. Mater. 26, 6084, (2016)

  8. A. Abliz, J. L. Wang, L. Xu, D. Wan, L. Liao*, C. Ye, C. S. Liu*, C. Z. Jiang, H. P. Chen, T. L. Guo Boost up the Electrical Performance of InGaZnO Thin Film Transistors with Inserting an Ultrathin InGaZnO:H layer Appl. Phys. Lett. 108, 213501, (2016)

  9. D. S. Zheng, J. L. Wang, W. D. Hu*, L. Liao*, H. H. Fang, N. Guo, P. Wang, F. Gong, X. D. Wang, Z. Y. Fan, X. Wu, X. J. Meng, X. S. Chen, W. Lu When nanowire meet ultra-high ferroelectric field – high performance full-depleted nanowire photodetectors Nano Lett. 16, 2548, (2016)

  10. X. Q. Liu, D. Wan, Y. Wu, X. H. Xiao, S. S. Guo, C. Z. Jiang, J. C. Li, T. S. Chen, X. F. Duan, Z. Y. Fan, L. Liao* Transparent Megahertz Circuits from Solution-processed Composite Thin Films Nanoscale 8, 7978, (2016)

  11. A. Abliz, C. W. Huang, J. L. Wang, L. Liao*, L. Xu, X. H. Xiao, W. W. Wu, Z. Y. Fan, C. Z. Jiang, J. C. Li, S. S. Guo, C. S. Liu, T. L. Guo Rational Design of ZnO:H/ZnO Bilayer Structure for High Performance Thin Film Transistors ACS Applied Materials & Interface 8, 7862, (2016)

  12. L. Xu, Q. Chen, L. Liao*, X. Q. Liu, T. C. Chang, K. C. Chang, T. M. Tsai, C. Z. Jiang, J. L. Wang*, J. C. Li Rational hydrogenation for enhanced mobility and high reliability on ZnO-based thin film transistors: from simulation to experiment ACS Applied Materials & Interface 8, 5408, (2016)

  13. Z. Y. Yang, J. L. Wang, L. Liao* Comment on “Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOX van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed” ACS Nano 10, 1714, (2016)

  14. X. M. Zou, C. W. Huang, L. F. Wang, L. J. Yin, W. Q. Li, J. L. Wang, B. Wu, Y. Q. Liu, Q. Yao, C. Z. Jiang, W. W. Wu, L. He, S. S. Chen, J. Ho, L. Liao* Dielectric Engineering of Boron Nitride/Hafnium Oxide Heterostructure for High-Performance Two-Dimensional Field Effect Transistors Adv. Mater. 28, 2062, (2016)

  15. D. Wan, X. Q. Liu, L. Xu, C. S. Liu, X. H. Xiao, S. S. Guo, L. Liao* The Study for Solution-Processed Alkali Metal Doped Indium Zinc Oxide Thin-Film Transistors IEEE Electron Device Letters 37, 50, (2016) Popular Articles (Jan. 2016)

  2015

  16. C. N. Liao, X. M. Zou, C. W. Huang, J. L. Wang, K. Zhang, Y. C. Kong, T. S. Chen, W. W. Wu, X. H. Xiao, C. Z. Jiang, L. Liao* Low interface trap densities and enhanced performance of AlGaN/GaN MOS high electron mobility transistors using thermal oxidized Y2O3 interlayer IEEE Electron Device Letters 36, 1284, (2015) Popular Articles (October 2015)

  17. J. L. Wang, S. L. Li, X. M. Zou, J. Ho, L. Liao*, X. H. Xiao, C. Z. Jiang, W. D. Hu, J. L. Wang, J. C. Li Integration of High- k Oxide on MoS2 by Using Ozone Pretreatment for High-Performance MoS2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation Small 11, 5932, (2015)

  18. X. D. Wang, P. Wang, J. L. Wang, W. D. Hu, X. H. Zhou, N. Guo, H. Huang, S. Sun, H. Shen, T. Lin, M. H. Tang, L. Liao, A. Q. Jiang, J. L. Sun, X. J. Meng, X. S. Chen, W. Lu, J. H. Chu Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics Adv. Mater. 27, 6575, (2015)

  19. Z. Y. Zhang, X. M. Zou, L. Xu, L. Liao*, W. Liu, J. Ho, X. H. Xiao, C. Z. Jiang, J. C. Li Hydrogen gas sensor based on metal oxide nanoparticles decorated graphene transistors Nanoscale 7, 10078, (2015)

  20. L. Xu, C. W. Huang, A. Abliz, Y. Hua, L. Liao*, W. W. Wu, X. H. Xiao, C. Z. Jiang, W. Liu, J. C. Li* The different roles of contact materials between oxidation interlayer and doping effect for high performance ZnO thin film transistors Appl. Phys. Lett. 106, 051607, (2015)

  21. J. S. Miao, W. D. Hu*, Y. L. Jing, W. J. Luo, L. Liao*, A. L. Pan, S. W. Wu, J. X. Cheng, X. S. Chen, W. Lu, Surface Plasmon-Enhanced Photodetection in Few-Layer MoS2 Phototransistors with Au Nanostructure Arrays Small 11, 2392, (2015)

  22. J. S. Miao, W. D. Hu*, N. Guo, Z. Y. Lu, X. Q. Liu, L. Liao*, P. P. Chen, T. Jiang, S. W. Wu, J. C. Ho, L. Wang, X. S. Chen, W. Lu* High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratio Small 11, 936, (2015)

  23. J. L. Wang, X. M. Zou, X. H. Xiao, L. Xu, C. L. Wang, C. Z. Jiang, J. C. Ho*, T. Wang, J. C. Li, L. Liao* Floating Gate Memory based Monolayer MoS2 Transistor with Metal Nanocrystals embedded in Gate Dielectrics. Small 11, 208, (2015)

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