1991.9-1993.7
Accelerator laboratory, Physics department, Wuhan University.
MS. course finished one year ahead.
Worked on the preparation of highly oriented (epitaxial) Pt film on SrTiO3 substrate by plane magnetron sputtering, which was part of a “863” high-technique tackle key problem.
1993.9-1996.7
Condensed matter physics speciality, Physics department, Wuhan University.
Ph.D. degree achieved in June, 1996.
Engaged in the research of fullerene clusters. The main research field includes two parts. Part I is “The structural character of theC60 film prepared by ICBD”; Part II dealt with “The semiconductor electrical characteristics and doping effects of the C60 films”.
1996.7-1998.7
Key Laboratory of Nuclear Analysis Techniques, Shanghai Institute of Nuclear Research, Chinese Academy of Science.
Worked as a postdoctoral fellow and dealt with the project “The investigation of the cluster-surface collision dynamics”, which was a key project supported by Chinese Academy of Science and Chinese National Natural Science Foundation.
1998.8- 1999.12
Department of Physics, Wuhan University, P.R.China.
Worked as an associated-professor in the researching faculty of the physics department.
2000.1- 2001.1
Marseille Center for Research on the Mechanisms of Crystal, French National Council for Scientific Research
Worked as a post-doctoral visiting scholar. Engaged in the GIXRD experimental works and quantitative analyses on the SiGe/Si system. Laterfocused on the computer simulation works of the synchrotron SXRD data obtained in HASYLAB Germany about the Pb/Ag, Ge/Ag (111), Bi/Si, Cu3Au surface alloy samples.
2001.1- Present
Department of Physics, Wuhan University, P.R.China.
Associate Professor, Supervisor of PhD Candidates in Physics (2008), Professor of Physics (2011).
2011.8- 2012.7
College of Science, Tibet University, P.R.China.
Vice Head, in charge of Discipline Construction, Scientific Research, Graduate Student, et al.
Research Projects:
Main research fields are the preparation and ion implantation studies of advanced functional material films. The focuses are on the material and device characteristics of wide band gap semiconductors.
Projects directed:
“The ion implantation preparation and characteristics study of GaN based diluted magnetic semiconductor”, National Natural Science Foundation of China, Grant No. 10205010, 2003.1- 2005.12
“The ion implantation preparation and characteristics studies of transparent and low-resistivity ohmic contacts on p-type GaN” , National Natural Science Foundation of China, Grant No. 10675094, 2007.1-2009.12.
“Ion implantation preparation and characteristics study of transparent conducting oxides based diluted magnetic semiconductor”, National Natural Science Foundation of China, Grant No. 11075122, 2011.1- 2013.12.
Projects from the Scientific Research foundation for the Returned Overseas Chinese Scholars, State Education Ministry, as well as from the Key Laboratory of Nuclear Analysis Techniques (LNAT), Chinese Academy of Science.
Teaching Courses:
2001.9-2003.1 ”College Physics” basic course
2001.3-6, 2003.9-12 “Electronic Circuit” experimental course
2001.9-2011.1 “Nano-Materials and Nano-Technology” specialized course
2003.2-2010.6 “Atomic Physics and Nuclear Physics” specialized core course (Bilingual teaching in Chinese, mainly in English)
2007.3-2010.11 “The Foundations and Applications of Nano-Science and Nano-Technology” general basic course
2011.8-2012.1 “Semiconductor Materials” specialized course
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