武汉大学物理科学与技术学院博士生导师简介：刘昌

　　51.L. Liao, H. B. Lu, J. C. Li, H. He, D. F. Wang, D. J. Fu, C. Liu, W. F. Zhang, Size dependence of gas sensitivity of ZnO nanorods, J. Phys. Chem C 111, 1900 (2007).

　　52.F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, T. Oku, Controlling the morphology of Ag nanoclusters by ion implantation to different doses and subsequent annealing, Phys. Rev. Lett. 97, 165501 (2006).

　　53.F. Mei, C. Liu*, L. Zhang, F. Ren, L. Zhou, W. K. Zhao, Y. L. Fang, Microstructural study of binary TiO2:SiO2 nanocrystalline thin film, J. Cryst. Growth 292, 87 (2006).

　　54.X. Z. Shang, S. D. Wu, C. Liu, W. X. Wang, L.W. Guo,Q. Huang and J. M. Zhou, Low temperature step-graded InAlAs/GaAs metamorphic buffer grown by molecular beam epitaxy, J. Phys. D: Appl. Phys. 39, 1800 (2006).

　　55.F. Mei, C. Liu*, L. Zhou, W. K. Zhao, Y. L. Fang, J. B. Wang, and Y. Y. Ren, Effect of annealing temperature on binary TiO2:SiO2 nanocrystalline thin films, J. Kor. Phys. Soc. 48, 1509 (2006).

　　56.F. Ren, C. Z. Jiang, C. Liu, J. B. Wang, Fabrication and annihilation of nanovoids in Cu nanoclusters by ion implantation into silica and subsequent annealing, Appl. Phys. Lett. 88, 183114 (2006).

　　57.L. Chen, Z. Q. Chen, X. Z. Shang, C. Liu*, S. Xu, Q. Fu, Effect of annealing temperature on density of ZnO quantum dots, Solid State Commun. 137, 561 (2006).

　　58.L. Liao, J. C. Li, D. F. Wang, C. Liu, M. Z. Peng, J. M. Zhou, Size dependence of Curie temperature in Co+ ion implanted ZnO nanowires, Nanotechnol. 17, 830 (2006).

　　59.L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, Electron field emission studies on ZnO nanowires, Mater. Lett. 59, 2465 (2005).

　　60.F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135, 268 (2005).

　　61.L. Liao, J. C. Li, D. F. Wang , C. Liu, C. S. Liu, Q. Fu, L. X. Fan, Field emission property improvement of ZnO nanowires coated with amorphous carbon and carbon nitride films, Nanotechnol. 16, 985 (2005).

　　62.C. Liu, Q. Fu, J.B. Wang, W.K. Zhao, Y.L. Fang, T. Mihara, M. Kiuchi, Structural characterization of nanocrystalline TiO2:SiO2 powders and thin film at 35 °C, J. Kor. Phys. Soc. 46, S104 (2005).

　　63.L. Liao, J. C. Li, D. H. Liu, C. Liu, D. F. Wang , W. Z .Song, Q. Fu, Self-assembly of aligned ZnO nanoscrews: Synthesis, growth, configuration and field emission, Appl. Phys. Lett. 86, 083106 (2005) (Cover image).

　　64.L. Liao, D. H. Liu, J. C. Li, C. Liu, Q. Fu, M. S. Ye, Synthesis and Raman analysis of 1D-ZnO nanostructure via vapor phase growth, Appl. Surf. Sci. 240, 175 (2005).

　　65.F. Ren, C. Z. Jiang, H. B. Chen, Y. Shi, C. Liu, J. B. Wang, Metal alloy and monoelemental nanoclusters in silica formed by sequential ion implantation and annealing in selected atmosphere, Physica B-CONDENSED MATTER 353, 92 (2004).

　　66.T. Asanuma, T. Matsutani, C. Liu, T. Mihara, and M. Kiuchi, Structural and optical properties of titanium dioxide films deposited by reactive magnetron sputtering in pure oxygen plasma, J. Appl. Phys. 95, 6011 (2004).

　　67.T. Matsutani, T. Asanuma , C. Liu, M. Kiuchi , and T. Takeuchi Deposition of SiO2 films by low-energy ion-beam induced chemical vapor deposition using hexamethyldisiloxane, Surf. Coat. Technol. 177-178, 365 (2004).

　　68.T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi and T. Takeuchi, Ion-assisted chemical vapor deposition of Si-C film with organosilicon precursor, Surf. Coat. Technol. 169-170, 624 (2003).

　　69.C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition, Solid State Commun. 126, 509 (2003).

　　70.W. K. Zhao, L. Zhou, C. Liu, L. Hu, Y. Fang, and M. Kiuchi, Photocatalytic activity of TiO2 prepared by liquid phase deposition, Acta Chim. Sinica 61, 699 (2003).

　　71.C. Liu, T. Matsutani, T. Asanuma, and M. Kiuchi, Structural, electrical and optical properties of indium tin oxide films prepared by low-energy oxygen-ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 348 (2003).

　　72.T. Matsutani, T. Asanuma, C. Liu, M. Kiuchi, and T. Takeuchi, Comparison of surface morphologies of SiO2 films prepared by ion-beam induced chemical vapor deposition and ion-beam assisted deposition, Nucl. Instr. Meth. B, 206, 343 (2003).

　　73.L. Zhou, C. Liu, W. Zhao, L. Hu, Y. Fang, Photocatalytic activity of Fe3+-doped TiO2 thin films prepared via liquid phase deposition, Chinese J. Catal. 24, 359 (2003).

　　74.C. Liu, T. Matsutani, T. Asaluma, K. Murai, M. Kiuchi, E. Alves, and M. Reis, Room-temperature growth of crystalline indium tin oxide films on glass using low energy oxygen ion beam assisted deposition, J. Appl. Phys. 93, 2262 (2003).

　　75.C. Liu, T. Matsutani, N. Yamamoto, and M. Kiuchi, High-quality indium tin oxide films prepared at roome temperature by oxygen ion beam assisted deposition, Europhys. Lett. 59, 606 (2002).

　　76.C. Liu, E. Alves, A. R. Ramos, M. F. da Silva, J. C. Soares, T. Matsutani, and M. Kiuchi, Annealing behavior and lattice location of Mn+ implanted GaN, Nucl. Instr. Meth. B, 191, 544 (2002).

　　77.E. Alves, C. Liu, E. B. Lopes, M. F. da Silva, J. C. Soares, J. Soares, C. Boemare, M. J. Soares, and T. Monteiro, Study of calcium ion implanted GaN, Nucl. Instr. Meth. B 190, 625 (2002).

　　78.T. Monteiro, C. Boemare, M. J. Soares, E. Alves, and C. Liu, Green and red emission in Ca implanted GaN samples, Physica B 308-310, 42 (2001).

　　79.C. Liu, A. Wenzel, B. Rauschenbach, E. Alves, A. D. Sequeira, N. Franco, M. F. da Silva, J. C. Soares, and X. J. Fan, Amorphization of GaN by ion implantation, Nucl. Instr. Meth. B 178, 200 (2001).

　　80.E. Alves, C. Liu, J. C. Waerenborgh, M. F. da Silva, and J. C. Soares, Study of Fe ion implanted GaN, Nucl. Instr. Meth. B, 175-177, 241 (2001).

　　81.C. Liu, E. Alves, A. Sequera, N. Franco, M. F. da Silva, and J. C. Soares, Fe ion implantation in GaN: damage, annealing, and lattice site location, J. Appl. Phys. 90, 81 (2001).

　　82.C. Liu, A. Wenzel, J. W. Gerlach, X. J. Fan, and B. Rauschenbach, Annealing study of ion implanted GaN, Surf. Coat. Technol. 128-129, 455 (2000).

　　83.C. Liu, Structural Characterization of Ion Implanted Gallium Nitride, Shaker, Aachen, 2000 (ISBN:3-8265-7107-X).

　　84.C. Liu, M. Schreck, A. Wenzel, B. Mensching, and B. Rauschenbach, Damage buildup and removal in Ca-ion implanted GaN, Appl. Phys. A 70, 53 (2000).

　　85.A. Wenzel, C. Liu, and B. Rauschenbach, Effect of implantation-parameters on the structural properties of Mg-ion implanted GaN, Mater. Sci. & Eng. B 59, 191 (1999).

　　86.C. Liu, A. Wenzel, K. Volz, and B. Rauschenbach, Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride, Nucl. Instr. Meth. B 148, 396 (1999).

　　87.W. Limmer, W. Ritter, R. Sauer, B. Mensching, C. Liu, and B. Rauschenbach, Raman scattering in ion-implanted GaN, Appl. Phys. Lett. 72, 2589 (1998).

　　88.C. Liu,, B. Mensching, M. Zeitler, K. Volz, and B. Rauschenbach, Ion implantation in GaN at liquid-nitrogen temperature: structural characteristics and amorphization, Phys. Rev. B 57, 2530 (1998).

　　89.B. Mensching, C. Liu, B. Rauschenbach, K. Kornitzer, and W. Ritter, Characterization of Ca and C implanted GaN, Mater. Sci. & Eng. B 50, 105 (1997).

　　90.C. Liu, B. Mensching, K. Volz, and B. Rauschenbach, Lattice expansion of Ca and Ar ion implanted GaN, Appl. Phys. Lett. 71, 2313 (1997).